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Semiconductor Electronics

JEE Main 2025 (Online) 28th January Evening ShiftMCQEasy📈 Topic in 2% papers+4−1
Ques. 1JEE Main 2025, 28 January (Evening Shift)

[figure] In the circuit shown here, assuming threshold voltage of diode is negligibly small, then voltage VAB is correctly represented by:

  1. [figure]
  2. [figure]
  3. VAB would be zero at all times.
  4. [figure]

Answer

(2) [figure]

Solution

The diode conducts only when the lower terminal of the source is at the higher potential (current: lower terminal → diode → B → R → A → upper terminal).

When V = V0 t > 0 (upper terminal positive), the diode is reverse biased no current through R VAB = 0.

When V0 t < 0, the ideal diode conducts B is joined to the lower terminal and A to the upper terminal

VAB = V0 t (negative).

VAB is zero in the positive half cycles and follows the negative half cycles of the input, as in option (2).

Answer: (2)

Keep practising — Semiconductor Electronics

Ques. 2JEE Main 2025, 24 January (Morning Shift)

Consider the following statements : Choose the correct answer from the options given below :

  1. A, C, E Only
  2. B, E Only
  3. A, C Only
  4. B, D, E Only
Ques. 3JEE Main 2025, 24 January (Evening Shift)

The output of the circuit is low (zero) for : [figure] Choose the correct answer from the options given below :

  1. (A), (B) and (C) only
  2. (A), (C) and (D) only
  3. (B), (C) and (D) only
  4. (A), (B) and (D) only
Ques. 4JEE Main 2025, 23 January (Evening Shift)

What is the current through the battery in the circuit shown below? [figure]

  1. 1.5 A
  2. 0.25 A
  3. 1.0 A
  4. 0.5 A
Ques. 5JEE Main 2025, 22 January (Morning Shift)

Which of the following circuits represents a forward biased diode? [figure] Choose the correct answer from the options given below:

  1. (C) and (E) only
  2. (A) and (D) only
  3. (B), (D) and (E) only
  4. (B), (C) and (E) only
Ques. 6JEE Main 2025, 22 January (Evening Shift)

[figure] To obtain the given truth table, following logic gate should be placed at G :

  1. NOR Gate
  2. OR Gate
  3. AND Gate
  4. NAND Gate
Ques. 7JEE Main 2024, 9 April (Morning Shift)

A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is 1.42 eV. The wavelength of light emitted from the LED is :

  1. 1243 nm
  2. 875 nm
  3. 650 nm
  4. 1400 nm
Ques. 8JEE Main 2024, 9 April (Evening Shift)

[figure] In the truth table of the above circuit the value of X and Y are :

  1. 1, 1
  2. 0, 1
  3. 1, 0
  4. 0, 0
Ques. 9JEE Main 2024, 9 April (Evening Shift)

The I–V characteristics of an electronic device are shown in the figure. The device is : [figure]

  1. a solar cell
  2. a transistor which can be used as an amplifier
  3. a diode which can be used as a rectifier
  4. a zener diode which can be used as a voltage regulator
Ques. 10JEE Main 2024, 8 April (Morning Shift)

The output Y of following circuit for given inputs is : [figure]

  1. A B
  2. A B
  3. A B(A + B)
  4. 0
Ques. 11JEE Main 2024, 8 April (Evening Shift)

A potential divider circuit is connected with a dc source of 20 V, a light emitting diode of glow in voltage 1.8 V and a zener diode of breakdown voltage of 3.2 V. The length (PR) of the resistive wire is 20 cm. The minimum length of PQ to just glow the LED is cm. [figure]

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