Semiconductor Electronics

In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to

1. The barrier voltage at the p-n junction.
2. The intensity of the light falling on the cell.
3. The frequency of the light falling on the cell.
4. The voltage applied at the p-n junction.

In semiconductors at room temperature

1. the valence band is partially empty and the conduction band is partially filled
2. the valence band is completely filled and the conduction band is partially filled
3. the valence band is completely filled
4. the conduction band is completely empty

The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is

1. (10/ 2) V
2. ( 10 ) V
3. 10 V
4. (20/ ) V

The output of OR gate is 1

1. if both inputs are zero
2. if either or both inputs are 1
3. only if both inputs are 1
4. if either input is zero

Of the diodes shown in the following diagrams, which one is reverse biased?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

Reverse bias applied to a junction diode

1. lowers the potential barrier
2. raises the potential barrier
3. increases the majority carrier current
4. increases the minority carrier current

If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be

1. 25 Hz
2. 50 Hz
3. 70.7 Hz
4. 100 Hz

Barrier potential of a p-n junction diode does not depend on

1. diode design
2. temperature
3. forward bias
4. doping density

An n-p-n transistor conducts when

1. both collector and emitter are positive with respect to the base
2. collector is positive and emitter is negative with respect to the base
3. collector is positive and emitter is at same potential as the base
4. both collector and emitter are negative with respect to the base

In a p-n junction

1. high potential at n side and low potential at p side
2. high potential at p side and low potential at n side
3. p and n both are at same potential
4. undetermined.

The given truth table is for which logic gate? [figure]

1. NAND
2. XOR
3. NOR
4. OR.

For the given circuit of p-n junction diode, which is correct? [figure]

1. in forward bias the voltage across R is V
2. in reverse bias the voltage across R is V
3. in forward bias the voltage across R is 2V
4. in reverse bias the voltage across R is 2V.

For a transistor ICIE = 0.96, then current gain for common emitter is

1. 12
2. 6
3. 48
4. 24

The given truth table is for which logic gate [figure]

1. NAND
2. XOR
3. NOR
4. OR

The current in the circuit will be [figure]

1. 540 A
2. 550 A
3. 510 A
4. 520 A

For a common base circuit if ICIE = 0.98 then current gain for common emitter circuit will be

1. 49
2. 98
3. 4.9
4. 25.5

From the following diode circuits, which diode is in forward biased condition?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

The correct relation between and for a transistor is

1. = 1-
2. = 1-
3. = -1
4. = 1