Semiconductor Electronics

Barrier potential of a p-n junction diode does not depend on

1. diode design
2. temperature
3. forward bias
4. doping density

An n-p-n transistor conducts when

1. both collector and emitter are positive with respect to the base
2. collector is positive and emitter is negative with respect to the base
3. collector is positive and emitter is at same potential as the base
4. both collector and emitter are negative with respect to the base

In a p-n junction

1. high potential at n side and low potential at p side
2. high potential at p side and low potential at n side
3. p and n both are at same potential
4. undetermined.

The given truth table is for which logic gate? [figure]

1. NAND
2. XOR
3. NOR
4. OR.

For the given circuit of p-n junction diode, which is correct? [figure]

1. in forward bias the voltage across R is V
2. in reverse bias the voltage across R is V
3. in forward bias the voltage across R is 2V
4. in reverse bias the voltage across R is 2V.

For a transistor ICIE = 0.96, then current gain for common emitter is

1. 12
2. 6
3. 48
4. 24

The given truth table is for which logic gate [figure]

1. NAND
2. XOR
3. NOR
4. OR

The current in the circuit will be [figure]

1. 540 A
2. 550 A
3. 510 A
4. 520 A

For a common base circuit if ICIE = 0.98 then current gain for common emitter circuit will be

1. 49
2. 98
3. 4.9
4. 25.5

From the following diode circuits, which diode is in forward biased condition?

1. [figure]
2. [figure]
3. [figure]
4. [figure]