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Semiconductor Electronics

AIPMT 2007MCQEasyNot asked in last 5 yrs+4−1
Ques. 1AIPMT 2007

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is [figure]

  1. an insulator
  2. a metal
  3. an n-type semiconductor
  4. a p-type semiconductor

Answer

(4) a p-type semiconductor

Solution

From the figure: conduction band has 2 electrons; valence band has 6 holes.

nh > ne, holes are the majority carriers.

As per NCERT, a semiconductor with nh ne is a p-type semiconductor (the acceptor level lies just above the valence band).

The material is a p-type semiconductor.

Answer: (4)

Keep practising — Semiconductor Electronics

Ques. 2AIPMT 2006

The following figure shows a logic gate circuit with two inputs A and B and the output C. [figure] The voltage waveforms of A, B and C are as shown below. [figure] The logic circuit gate is

  1. OR gate
  2. AND gate
  3. NAND gate
  4. NOR gate
Ques. 3AIPMT 2006

Which one of the following represents forward bias diode ?

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
Ques. 4AIPMT 2006

A transistor is operated in common emitter configuration at constant collector voltage VC = 1.5 V such that a change in the base current from 100 to 150 produces a change in the collector current from 5 mA to 10 mA. The current gain is

  1. 50
  2. 67
  3. 75
  4. 100
Out of syllabus
Ques. 5AIPMT 2005

Choose the only false statement from the following.

  1. In conductors the valence and conduction bands overlap.
  2. Substances with energy gap of the order of 10 eV are insulators.
  3. The resistivity of a semiconductor increases with increase in temperature.
  4. The conductivity of a semiconductor increases with increase in temperature.
Ques. 6AIPMT 2005

Zener diode is used for

  1. amplification
  2. rectification
  3. stabilisation
  4. producing oscillations in an oscillator.
Ques. 7AIPMT 2005

Application of a forward bias to a p-n junction

  1. widens the depletion zone
  2. increases the potential difference across the depletion zone
  3. increases the number of donors on the n side
  4. decreases the electric field in the depletion zone.
Ques. 8AIPMT 2005

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationships is true in their case?

  1. (Eg)C > (Eg)Si
  2. (Eg)C < (Eg)Si
  3. (Eg)C = (Eg)Si
  4. (Eg)C < (Eg)Ge.
Ques. 9AIPMT 2005

In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to

  1. The barrier voltage at the p-n junction.
  2. The intensity of the light falling on the cell.
  3. The frequency of the light falling on the cell.
  4. The voltage applied at the p-n junction.
Ques. 10AIPMT 2004

In semiconductors at room temperature

  1. the valence band is partially empty and the conduction band is partially filled
  2. the valence band is completely filled and the conduction band is partially filled
  3. the valence band is completely filled
  4. the conduction band is completely empty
Ques. 11AIPMT 2004

The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is

  1. (10/ 2) V
  2. ( 10 ) V
  3. 10 V
  4. (20/ ) V

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