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Semiconductor Electronics

AIPMT 2006MCQEasy📈 Topic in 12% papers+4−1
Ques. 1AIPMT 2006

A transistor is operated in common emitter configuration at constant collector voltage VC = 1.5 V such that a change in the base current from 100 to 150 produces a change in the collector current from 5 mA to 10 mA. The current gain is

  1. 50
  2. 67
  3. 75
  4. 100

Answer

(4) 100

Solution

Current gain in common emitter configuration:

= ( IC IB )VC

IC = 10 - 5 = 5 mA = 5 10-3 A

IB = 150 - 100 = 50 = 50 10-6 A

∴ = 5 10-350 10-6 = 100

Answer: (4)

Out of syllabus

Keep practising — Semiconductor Electronics

Ques. 2AIPMT 2005

Choose the only false statement from the following.

  1. In conductors the valence and conduction bands overlap.
  2. Substances with energy gap of the order of 10 eV are insulators.
  3. The resistivity of a semiconductor increases with increase in temperature.
  4. The conductivity of a semiconductor increases with increase in temperature.
Ques. 3AIPMT 2005

Zener diode is used for

  1. amplification
  2. rectification
  3. stabilisation
  4. producing oscillations in an oscillator.
Ques. 4AIPMT 2005

Application of a forward bias to a p-n junction

  1. widens the depletion zone
  2. increases the potential difference across the depletion zone
  3. increases the number of donors on the n side
  4. decreases the electric field in the depletion zone.
Ques. 5AIPMT 2005

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationships is true in their case?

  1. (Eg)C > (Eg)Si
  2. (Eg)C < (Eg)Si
  3. (Eg)C = (Eg)Si
  4. (Eg)C < (Eg)Ge.
Ques. 6AIPMT 2005

In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to

  1. The barrier voltage at the p-n junction.
  2. The intensity of the light falling on the cell.
  3. The frequency of the light falling on the cell.
  4. The voltage applied at the p-n junction.
Ques. 7AIPMT 2004

In semiconductors at room temperature

  1. the valence band is partially empty and the conduction band is partially filled
  2. the valence band is completely filled and the conduction band is partially filled
  3. the valence band is completely filled
  4. the conduction band is completely empty
Ques. 8AIPMT 2004

The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is

  1. (10/ 2) V
  2. ( 10 ) V
  3. 10 V
  4. (20/ ) V
Ques. 9AIPMT 2004

The output of OR gate is 1

  1. if both inputs are zero
  2. if either or both inputs are 1
  3. only if both inputs are 1
  4. if either input is zero
Ques. 10AIPMT 2004

Of the diodes shown in the following diagrams, which one is reverse biased?

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
Ques. 11AIPMT 2003

Reverse bias applied to a junction diode

  1. lowers the potential barrier
  2. raises the potential barrier
  3. increases the majority carrier current
  4. increases the minority carrier current

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