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Semiconductor Electronics

NEET (UG) 2020MCQEasy📈 Topic in 12% papers+4−1
Ques. 1NEET (UG) 2020

For transistor action, which of the following statements is correct?

  1. Base, emitter and collector regions should have same size.
  2. Both emitter junction as well as the collector junction are forward biased.
  3. The base region must be very thin and lightly doped.
  4. Base, emitter and collector regions should have same doping concentrations.

Answer

(3) The base region must be very thin and lightly doped.

Solution

For transistor action:

• the emitter is moderately sized and heavily doped,

• the base is very thin and lightly doped,

• the collector is moderately doped and larger in size than the emitter,

• the emitter–base junction is forward biased and the collector–base junction is reverse biased.

∴ Statements (1), (2) and (4) are incorrect; the base region must be very thin and lightly doped.

Answer: (3)

Out of syllabus

Keep practising — Semiconductor Electronics

Ques. 2NEET (UG) 2019

The correct Boolean operation represented by the circuit diagram drawn is : [figure]

  1. OR
  2. NAND
  3. NOR
  4. AND
Ques. 3NEET (UG) 2019

For a p-type semiconductor, which of the following statements is true?

  1. Holes are the majority carriers and trivalent atoms are the dopants.
  2. Holes are the majority carriers and pentavalent atoms are the dopants.
  3. Electrons are the majority carriers and pentavalent atoms are the dopants.
  4. Electrons are the majority carriers and trivalent atoms are the dopants.
Ques. 4NEET 2018

In the combination of the following gates the output Y can be written in terms of inputs A and B as [figure]

  1. A.B
  2. A. B + A.B
  3. A. B + A.B
  4. A + B
Ques. 5NEET 2018

In a p-n junction diode, change in temperature due to heating

  1. affects only reverse resistance
  2. affects only forward resistance
  3. does not affect resistance of p-n junction
  4. affects the overall V - I characteristics of p-n junction
Ques. 6NEET 2018

In the circuit shown in the figure, the input voltage Vi is 20 V, VBE = 0 and VCE = 0. The values of IB, IC and β are given by [figure]

  1. IB = 40 , IC = 10 mA, β = 250
  2. IB = 25 , IC = 5 mA, β = 200
  3. IB = 20 , IC = 5 mA, β = 250
  4. IB = 40 , IC = 5 mA, β = 125
Out of syllabus
Ques. 7NEET 2017

The given electrical network is equivalent to [figure]

  1. OR gate
  2. NOR gate
  3. NOT gate
  4. AND gate
Ques. 8NEET 2017

Which one of the following represents forward bias diode ?

  1. [figure]
  2. [figure]
  3. [figure]
  4. [figure]
Ques. 9NEET 2017

In a common emitter transistor amplifier the audio signal voltage across the collector is 3 V. The resistance of collector is 3 k . If current gain is 100 and the base resistance is 2 k , the voltage and power gain of the amplifier is

  1. 15 and 200
  2. 150 and 15000
  3. 20 and 2000
  4. 200 and 1000
Out of syllabus
Ques. 10NEET 2016 (Phase 1)

To get output 1 for the following circuit, the correct choice for the input is [figure]

  1. A = 1, B = 1, C = 0
  2. A = 1, B = 0, C = 1
  3. A = 0, B = 1, C = 0
  4. A = 1, B = 0, C = 0
Ques. 11NEET 2016 (Phase 1)

Consider the junction diode as ideal. The value of current flowing through AB is [figure]

  1. 10-1 A
  2. 10-3 A
  3. 0 A
  4. 10-2 A

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