Semiconductor Electronics

The current I in the circuit shown below is : (All diodes are ideal and identical) [figure]

1. 13 A
2. 152 A
3. 53 A
4. 59 A

[figure] In the given circuits (a), (b) and (c), the potential drop across the two p-n junctions are equal in

1. Circuit (a) only
2. Circuit (b) only
3. Circuit (c) only
4. Both circuits (a) and (c)

The increase in the width of the depletion region in a p-n junction diode is due to :

1. reverse bias only
2. both forward bias and reverse bias
3. increase in forward current
4. forward bias only

In a p-n junction diode, change in temperature due to heating

1. affects only reverse resistance
2. affects only forward resistance
3. does not affect resistance of p-n junction
4. affects the overall V - I characteristics of p-n junction

Which one of the following represents forward bias diode ?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

Consider the junction diode as ideal. The value of current flowing through AB is [figure]

1. 10-1 A
2. 10-3 A
3. 0 A
4. 10-2 A

The given circuit has two ideal diodes connected as shown in the figure. The current flowing through the resistance R1 will be [figure]

1. 2.5 A
2. 10.0 A
3. 1.43 A
4. 3.13 A

In the given figure, a diode D is connected to an external resistance R = 100 Ω and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be [figure]

1. 20 mA
2. 35 mA
3. 30 mA
4. 40 mA

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is [figure]

1. 0.75 A
2. zero
3. 0.25 A
4. 0.5 A

In the following figure, the diodes which are forward biased, are [figure]

1. (A), (B) and (D)
2. (C) only
3. (C) and (A)
4. (B) and (D)

In forward biasing of the p-n junction

1. the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
2. the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
3. the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
4. the positive terminal of the battery is connected to p-side and the depletion region becomes thin.

Which one of the following represents forward bias diode?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

Which one of the following represents forward bias diode ?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

Application of a forward bias to a p-n junction

1. widens the depletion zone
2. increases the potential difference across the depletion zone
3. increases the number of donors on the n side
4. decreases the electric field in the depletion zone.

Of the diodes shown in the following diagrams, which one is reverse biased?

1. [figure]
2. [figure]
3. [figure]
4. [figure]

Reverse bias applied to a junction diode

1. lowers the potential barrier
2. raises the potential barrier
3. increases the majority carrier current
4. increases the minority carrier current

In a p-n junction

1. high potential at n side and low potential at p side
2. high potential at p side and low potential at n side
3. p and n both are at same potential
4. undetermined.

For the given circuit of p-n junction diode, which is correct? [figure]

1. in forward bias the voltage across R is V
2. in reverse bias the voltage across R is V
3. in forward bias the voltage across R is 2V
4. in reverse bias the voltage across R is 2V.

The current in the circuit will be [figure]

1. 540 A
2. 550 A
3. 510 A
4. 520 A

From the following diode circuits, which diode is in forward biased condition?

1. [figure]
2. [figure]
3. [figure]
4. [figure]